Agnit Semiconductors: India's GaN Deep-Tech Pioneer (45 char

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Create a professional, clean white-blue themed PowerPoint presentation titled 'Agnit Semiconductors – India’s Emerging Deep-Tech Gallium-Based Semiconductor Startup.' Follow this structure: Slide 1 – Title Slide Title: Agnit Semiconductors Subtitle: India’s Emerging Deep-Tech Semiconductor Innovator Include: company logo (if available), modern clean white-blue tech background. Slide 2 – Introduction Overview of Agnit Semiconductors as India’s first vertically integrated GaN startup (IISc incubated). Brief explanation of gallium-based semiconductors (GaN, GaAs) and why deep-tech matters for 5G, defense, EVs, and power electronics. Slide 3 – Company Overview Founded: 2019 after 18+ years of IISc R&D. Founders: Hareesh Chandrasekar, Madhusudan Atre, Srinivasan Raghavan, Muralidharan Rangarajan. HQ: Bengaluru, India. Mission: Lead India in GaN innovation. Vision: Power next-gen technologies with GaN. Slide 4 – Technology Highlight Gallium Nitride (GaN) and Gallium Arsenide (GaAs) advantages over silicon: higher efficiency, better heat handling, faster switching speeds. Slide 5 – Product Portfolio GaN epi wafers, RF components, power devices, RF modules, power electronics, defense solutions. Slide 6 – Applications 5G telecom, radar & defense, electric vehicles, power electronics, high-frequency communications, data centers. Slide 7 – Market Opportunity $12.5B global GaN market by 2030 (CAGR 27.4%). India’s $63B semiconductor target by 2026. ₹76,000 Cr Semicon India Program. Government incentives and deep-tech adoption. Slide 8 – Business Model B2B semiconductor supply; custom design, manufacturing, technical support. Target industries: telecom, defense, EVs, renewables. Partnerships with IISc, OEMs, and Govt initiatives. Slide 9 – Funding Total $4.87M raised across two rounds (2021, 2024). Investors: 3one4 Capital, Zephyr Peacock. Govt support: Karnataka Govt, Ministry of Defence, Semicon India Program. Slide 10 – Financial Snapshot Pre-revenue/limited revenue phase; pilot wafer sales; 270% funding growth; commercialization by 2025. Slide 11 – Competitive Advantage Indigenous design, vertical integration, 100% Made in India technology. 10x faster switching, 3x power efficiency, 5x better heat handling vs. silicon. Slide 12 – Challenges Complex manufacturing ecosystem, high R&D costs, competition from global players (Infineon, Wolfspeed, GaN Systems). Slide 13 – Future Roadmap Expansion plans, new GaN products, export opportunities, alignment with India’s semiconductor mission. Slide 14 – Conclusion Summary of Agnit’s importance as India’s deep-tech leader and contribution to self-reliant semiconductor manufacturing. Slide 15 – Q&A Thank You message and optional contact info.

Overview of Agnit Semiconductors, IISc-incubated GaN startup founded 2019. Covers GaN advantages over silicon, products for 5G/EV/defense, $12.5B market by 2030, $4.87M funding, vertical integration,

December 5, 202515 slides
Slide 1 of 15

Slide 1 - Agnit Semiconductors

The slide's main title is "Agnit Semiconductors." Its subtitle describes it as "India’s Emerging Deep-Tech Semiconductor Innovator."

Agnit Semiconductors

India’s Emerging Deep-Tech Semiconductor Innovator

Source: India’s Emerging Deep-Tech Semiconductor Innovator

Slide 1 - Agnit Semiconductors
Slide 2 of 15

Slide 2 - Introduction

India's first vertically integrated GaN startup, incubated by IISc, is introduced on this slide. It emphasizes GaN/GaAs semiconductors' superior efficiency over silicon, powering 5G telecom, defense, EVs, power electronics, and next-gen deep-tech innovations.

Introduction

  • India's first vertically integrated GaN startup (IISc incubated)
  • GaN/GaAs semiconductors outperform silicon in efficiency
  • Powering 5G telecom, defense, EVs, power electronics
  • Deep-tech innovation for next-gen technologies

Source: Overview: India’s first vertically integrated GaN startup (IISc incubated). GaN/GaAs semiconductors enable 5G, defense, EVs, power electronics with superior efficiency.

Slide 2 - Introduction
Slide 3 of 15

Slide 3 - Company Overview

The company, founded in 2019 in Bengaluru, India, after 18+ years of IISc R&D, was established by Hareesh Chandrasekar, Madhusudan Atre, Srinivasan Raghavan, and Muralidharan Rangarajan. Its mission is to lead India in GaN innovation, with a vision to power next-gen technologies using GaN.

Company Overview

  • Founded in 2019 after 18+ years of IISc R&D
  • Founders: Hareesh Chandrasekar, Madhusudan Atre, Srinivasan Raghavan, Muralidharan Rangarajan
  • Headquartered in Bengaluru, India
  • Mission: Lead India in GaN innovation
  • Vision: Power next-gen technologies with GaN
Slide 3 - Company Overview
Slide 4 of 15

Slide 4 - Technology

The slide compares GaN and GaAs to silicon, noting their wider bandgaps, higher electron mobility, and superior thermal conductivity for higher voltages, temperatures, and frequencies. It highlights benefits like greater power efficiency, heat handling, and switching speeds for 5G telecom, EVs, defense radar, power electronics, and data centers.

Technology

GaN & GaAs Advantages over SiliconKey Benefits for Advanced Applications
Gallium Nitride (GaN) and Gallium Arsenide (GaAs) feature wider bandgaps, higher electron mobility, and superior thermal conductivity compared to silicon, enabling operation at higher voltages, temperatures, and frequencies.Higher power efficiency, better heat handling, and faster switching speeds power innovations in 5G telecom, EVs, defense radar, power electronics, and data centers.
Slide 4 - Technology
Slide 5 of 15

Slide 5 - Product Portfolio

The Product Portfolio slide outlines a GaN-based lineup including Epi Wafers for high-performance layers, RF Components and Modules for signal processing and wireless communications, and Power Devices and Electronics for energy management. It also features Defense Solutions tailored for radar and electronic warfare.

Product Portfolio

  • GaN Epi Wafers for foundational high-performance layers
  • RF Components for high-frequency signal processing
  • Power Devices enabling efficient energy management
  • RF Modules for integrated wireless communications
  • Power Electronics for advanced power conversion
  • Defense Solutions for radar and electronic warfare
Slide 5 - Product Portfolio
Slide 6 of 15

Slide 6 - Applications

The "Applications" slide lists key sectors for the technology. These include 5G Telecommunications, Radar & Defense, Electric Vehicles, Power Electronics, High-Frequency Communications, and Data Centers.

Applications

  • 5G Telecommunications
  • Radar & Defense
  • Electric Vehicles
  • Power Electronics
  • High-Frequency Communications
  • Data Centers
Slide 6 - Applications
Slide 7 of 15

Slide 7 - Market Opportunity

The "Market Opportunity" slide showcases key stats in the GaN and semiconductors sector. It highlights a $12.5B global GaN market by 2030 (27.4% CAGR), India's $63B semis target by 2026, and ₹76,000 Cr in Semicon India Program government incentives.

Market Opportunity

  • $12.5B: Global GaN Market
  • by 2030 (CAGR 27.4%)

  • $63B: India Semis Target
  • by 2026

  • ₹76,000 Cr: Semicon India Program
  • Govt incentives boost

Slide 7 - Market Opportunity
Slide 8 of 15

Slide 8 - Business Model

The business model focuses on a B2B semiconductor supply chain, providing custom design, manufacturing, and support. It targets telecom, defense, EVs, and renewables, partnering with IISc, OEMs, and government initiatives.

Business Model

  • B2B semiconductor supply chain
  • Custom design, manufacturing, and support
  • Targets: telecom, defense, EVs, renewables
  • Partners: IISc, OEMs, Government initiatives

Source: B2B supply: custom design, manufacturing, support. Targets: telecom, defense, EVs, renewables. Partners: IISc, OEMs, Govt.

Slide 8 - Business Model
Slide 9 of 15

Slide 9 - Funding

The Funding slide reports a total of $4.87M raised across 2021 and 2024 rounds. It lists 2 private investors (3one4 Capital, Zephyr Peacock) and 3 government supports (Karnataka, MoD, Semicon India).

Funding

  • $4.87M: Total Raised
  • 2021 & 2024 rounds

  • 2: Private Investors
  • 3one4 Capital, Zephyr Peacock

  • 3: Govt Supports
  • Karnataka, MoD, Semicon India

Slide 9 - Funding
Slide 10 of 15

Slide 10 - Financial Snapshot

The Financial Snapshot slide shows $4.87M in total funding raised across two rounds (2021, 2024), with 270% round-over-round growth. It targets commercialization in 2025, featuring current pilot sales and upcoming full revenue.

Financial Snapshot

  • $4.87M: Total Funding Raised
  • Across two rounds (2021, 2024)

  • 270%: Funding Growth
  • Significant round-over-round increase

  • 2025: Commercialization Target
  • Pilot sales now; full revenue ahead

Slide 10 - Financial Snapshot
Slide 11 of 15

Slide 11 - Competitive Advantage

The slide on Competitive Advantage highlights indigenous design, full vertical integration, and 100% Made in India technology. It also showcases superior performance versus silicon: 10x faster switching, 3x greater power efficiency, and 5x better heat handling.

Competitive Advantage

  • Indigenous design and development
  • Full vertical integration
  • 100% Made in India technology
  • 10x faster switching vs. silicon
  • 3x greater power efficiency vs. silicon
  • 5x superior heat handling vs. silicon
Slide 11 - Competitive Advantage
Slide 12 of 15

Slide 12 - Challenges

The "Challenges" slide outlines key industry hurdles. These include complex manufacturing ecosystem requirements, high R&D costs, and intense global competition from Infineon, Wolfspeed, and GaN Systems.

Challenges

  • Complex manufacturing ecosystem requirements
  • High research and development costs
  • Intense global competition from Infineon, Wolfspeed, GaN Systems
Slide 12 - Challenges
Slide 13 of 15

Slide 13 - Future Roadmap

The Future Roadmap slide presents a timeline for GaN technology advancements from 2025 to 2028. It covers full-scale domestic production in 2025, RF expansions for 5G and defense in 2026, exports to Southeast Asia and Europe in 2027, and facility growth under India's Semiconductor Mission in 2028.

Future Roadmap

2025: Commercialization and Scale-Up Launch full-scale production of GaN epi wafers and power devices for domestic markets. 2026: New GaN Product Expansion Introduce advanced RF components and modules for 5G telecom and defense sectors. 2027: International Export Launch Enter export markets in Southeast Asia and Europe with high-efficiency GaN solutions. 2028: National Mission Alignment Expand facilities under India’s Semiconductor Mission to achieve self-reliance in GaN tech.

Slide 13 - Future Roadmap
Slide 14 of 15

Slide 14 - Conclusion

The conclusion slide highlights Agnit as India's deep-tech GaN leader advancing self-reliant semiconductor manufacturing. It features the slogan "Pioneering India's GaN Revolution" and a call to partner for 5G, defense, EVs, and beyond, ending with "Thank You."

Conclusion

Agnit: India’s deep-tech GaN leader driving self-reliant semiconductor manufacturing.

Pioneering India's GaN Revolution (4 words)

Partner with Agnit to power 5G, defense, EVs, and beyond (9 words)

Thank You

Source: Agnit Semiconductors Presentation

Speaker Notes
Emphasize Agnit's leadership in GaN for India's self-reliance. Closing: 'Pioneering India's GaN Revolution.' CTA: Invite partnerships and Q&A.
Slide 14 - Conclusion
Slide 15 of 15

Slide 15 - Q&A

This slide is a title slide named "Q&A". It displays the text "Q&A" with the subtitle "Thank You!".

Q&A

Thank You!

Source: Slide 15 – Q&A

Speaker Notes
Thank You! Optional contact info.
Slide 15 - Q&A

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