The slide outlines a four-step workflow for the IGBT/MOSFET role: receiving gate signals to initiate high-voltage switching, activating parallel MOSFETs for efficient power conduction, monitoring current/voltage/temperature for faults, and engaging redundancy to prevent failures. This ensures reliable operation in high-voltage paths by detecting issues like overheating, shorts, or avalanches and activating backups.
IGBT/MOSFET Role
{ "headers": [ "Step", "Action", "Details" ], "rows": [ [ "1. Signal Reception", "Receive gate control", "Initiates on/off switching in HV paths" ], [ "2. Power Conduction", "Parallel MOSFETs activate", "Low RDS(on) enables efficient high-voltage switching" ], [ "3. Monitoring", "Sense current/voltage/temp", "Detects overheat, short-circuit, avalanche conditions" ], [ "4. Mitigation", "Engage redundancy", "Backup paths prevent single-point failure" ] ] }
Source: iBDU Technical Study
Speaker Notes
Function: Power switching in HV paths. Schematic: Parallel MOSFETs for low RDS(on). Failure modes: Overheat, short-circuit, avalanche. Mitigation: Redundancy. Describe the workflow diagram highlighting the switching process, parallel configuration for efficiency, and redundancy for safety.